M30L40C Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

M30L40C
Vishay General Semiconductor
New Product
100
T_J = 150 °C
T_J = 125 °C
10 ^TJ ^{= 100 °C}
T_J = 25 °C
1
10 000
1000
0.1
0
0.2
0.4
0.6
0.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
10
1
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
10
Junction to Case
1
0.1
T_J = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
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For technical questions within your region, please contact one of the following: Document Number: 89012
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Revision: 27-Aug-08