M30L40C Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

New Product
M30L40C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
I_F = 8 A
I_F = 15 A
T_J = 25 °C
Instantaneous forward voltage per diode ^{(1) IF = 30 A}
V_F
I_F = 8 A
I_F = 15 A
T_J = 125 °C
I_F = 30 A
0.430
0.490
0.595
0.331
0.413
0.572
Reverse current per diode ⁽²⁾
V_R = 40 V
T_J = 25 °C
T_J = 100 °C
I_R
88
12
Typical junction capacitance per diode
4.0 V, 1 MHz
C_J
750
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
0.55
-
-
0.48
-
360
45
-
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJC
M30L40C
2.0
UNIT
V
µA
mA
pF
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
M30L40C-E3/4W
2.068
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
20
15
10
5
0
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
9
D = 0.3
D = 0.8
8
D = 0.2
D = 0.5
7
D = 0.1
6
D = 1.0
5
4
3
T
2
1
D = t_p/T
t_p
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
Document Number: 89012 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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