M10HXX Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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M10Hxx, MB10Hxx, MF10Hxx
Vishay General Semiconductor
100
T_J = 175 °C
10
T_J = 150 °C
1.0
0.1
T_J = 125 °C
T_J = 100 °C
T_J = 25 °C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
10
1
0.1
T_J = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
100
10
1
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN
1
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
PIN 1
PIN 2
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
CASE
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AC
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
1
2
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 16-Mar-16
3
Document Number: 87727
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