M10HXX Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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M10Hxx, MB10Hxx, MF10Hxx
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
Maximum reverse current
V_F ⁽¹⁾
I_R ⁽²⁾
I_F = 10 A
I_F = 10 A
I_F = 20 A
I_F = 20 A
Rated V_R
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
T_J = 25 °C
T_J = 125 °C
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: pulse width ≤ 40 ms}
VALUE
0.77
0.64
0.88
0.73
4.5
6.0
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M
MB
MF
Typical thermal resistance
R_θJC
2.7
2.7
5.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
M10H100HE3_A/P ⁽¹⁾
1.80
ITO-220AC
MF10H100HE3_A/P ⁽¹⁾
1.94
TO-263AB
MB10H100HE3_A/P ⁽¹⁾
1.33
TO-263AB
MB10H100HE3_A/I ⁽¹⁾
1.33
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
P
P
P
I
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_C = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
M, MB
12
8
4
MF
0
0
50
100
150
180
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
T_J = T_J Max.
250
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 16-Mar-16
2
Document Number: 87727
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