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J201 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier | |||
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J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
5
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
8
f = 1 kHz
4
10 nA
1 nA
Gate Leakage Current
TA = 125_C
IG @ ID = 500 mA
ID = 100 mA
6
gfs
4
2
3
IDSS
2
1
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
ID = 500 mA
ID = 100 mA
IGSS @ 25_C
0
0
â1
â2
â3
â4
VGS(off) â Gate-Source Cutoff Voltage (V)
0
â5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1500
10
1200
gos
8
900
6
rDS
600
4
0.1 pA
0
15
30
VDG â Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
2
VGS(off) = â1.5 V
VDS = 10 V
f = 1 kHz
1.6
TA = â55_C
1.2
25_C
0.8
300
0
0
400
360
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
â1
â2
â3
â4
VGS(off) â Gate-Source Cutoff Voltage (V)
2
0
â5
Output Characteristics
VGS(off) = â0.7 V
VGS = 0 V
240
â0.1 V
160
â0.2 V
â0.3 V
80
â0.5 V
â0.4 V
0
0
4
8
12
16
20
VDS â Drain-Source Voltage (V)
Document Number: 70233
S-40393âRev. G, 15-Mar-04
0.4
125_C
0
0.01
0.1
1
ID â Drain Current (mA)
Output Characteristics
2
VGS(off) = â1.5 V
1.6
VGS = 0 V
1.2
â0.3 V
0.8
â0.6 V
0.4
â1.2 V
â0.9 V
0
0
4
8
12
16
20
VDS â Drain-Source Voltage (V)
www.vishay.com
3
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