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J201 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
5
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
8
f = 1 kHz
4
10 nA
1 nA
Gate Leakage Current
TA = 125_C
IG @ ID = 500 mA
ID = 100 mA
6
gfs
4
2
3
IDSS
2
1
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
ID = 500 mA
ID = 100 mA
IGSS @ 25_C
0
0
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
0
−5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1500
10
1200
gos
8
900
6
rDS
600
4
0.1 pA
0
15
30
VDG − Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
2
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
1.6
TA = −55_C
1.2
25_C
0.8
300
0
0
400
360
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
2
0
−5
Output Characteristics
VGS(off) = −0.7 V
VGS = 0 V
240
−0.1 V
160
−0.2 V
−0.3 V
80
−0.5 V
−0.4 V
0
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
0.4
125_C
0
0.01
0.1
1
ID − Drain Current (mA)
Output Characteristics
2
VGS(off) = −1.5 V
1.6
VGS = 0 V
1.2
−0.3 V
0.8
−0.6 V
0.4
−1.2 V
−0.9 V
0
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
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3