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J201 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
IG = −1 mA , VDS = 0 V
VDS = 15 V, ID = 10 nA
VDS = 15 V, VGS = 0 V
VGS = −20 V, VDS = 0 V
−2
TA = 125_C
−1
VDG = 10 V, ID = 0.1 mA
−2
VDS = 15 V, VGS = −5 V
2
IG = 1 mA , VDS = 0 V
0.7
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs
VDS = 15 V, VGS = 0 V
f = 1 kHz
Ciss
4.5
VDS = 15 V, VGS = 0 V
f = 1 MHz
Crss
1.3
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
6
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
J/SST201
Min Max
−40
−0.3
0.2
−1.5
1
−100
0.5
Limits
J/SST202
Min Max
−40
−0.8
−4
0.9
4.5
−100
1
J/SST204c
Min Max Unit
−25
V
−0.3
−2
0.2
3
mA
−100 pA
nA
pA
V
0.5
mS
pF
nV⁄
√Hz
NPA, NH
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2
Document Number: 70233
S-40393—Rev. G, 15-Mar-04