IRF9Z34S Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
- 18
A
-
-
- 72
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = - 18 A, V_GS = 0 V^b
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
t_rr
-
T_J = 25 °C, I_F = - 18 A, dI/dt = 100 A/µs^{b, c}
100
200
ns
Q_rr
-
280 520 nC
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z34/SiHF9Z34 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91093
S-Pending-Rev. A, 03-Jun-08
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