IRF9Z34S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 60
V_GS = - 10 V
34
9.9
16
Single
0.14
I²PAK (TO-262)
S
D²PAK (TO-263)
G
G
D
S
D
P-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
Available
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L) RoHS*
COMPLIANT
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is
available for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF9Z34SPbF
SiHF9Z34S-E3
SnPb
IRF9Z34S
SiHF9Z34S
Note
a. See device orientation.
D²PAK (TO-263)
IRF9Z34STRLPbF^a
SiHF9Z34STL-E3^a
IRF9Z34STRL^a
SiHF9Z34STL^a
D²PAK (TO-263)
IRF9Z34STRRPbF^a
SiHF9Z34STR-E3^a
IRF9Z34STRR^a
SiHF9Z34STR^a
I²PAK (TO-262)
IRF9Z34LPbF
SiHF9Z34L-E3
IRF9Z34L
SiHF9Z34L
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^{b, e}
E_AS
Avalanche Current^a
I_AR
Repetiitive Avalanche Energy^a
E_AR
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
- 60
± 20
- 18
- 13
- 72
0.59
370
- 18
8.8
UNIT
V
A
W/°C
mJ
A
mJ
Document Number: 91093
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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