IRF840B Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840B
Vishay Siliconix
20
TOP 15 V
14 V
T_J = 25 °C
13 V
16
12 V
11 V
10 V
9.0 V
12
8.0 V
7.0 V
6.0 V
8
4
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
2.5
I_D = 4 A
2
1.5
1
V_GS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
15
TOP 15 V
14 V
13 V
12
12 V
11 V
10 V
9.0 V
9
8.0 V
7.0 V
6.0 V
5.0 V
6
T_J = 150 °C
3
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
C_oss
C_iss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
10
C_rss
1
0
100
200
300
400
500
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
16
12
8
T_J = 150 °C
4
T_J = 25 °C
0
0
5
10
15
20
25
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
24
V_DS = 400 V
20
V_DS = 250 V
V_DS = 100 V
16
12
8
4
0
0
5
10
15
20
25
Q_g, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-1375-Rev. A, 18-Jun-12
3
Document Number: 91521
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000