IRF840B Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

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IRF840B
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R_thJA
R_thJC
TYP.
-
-
MAX.
62
0.8
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance^a
Dynamic
V_DS
V_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 μA
Reference to 25 °C, I_D = 250 μA
V_DS = V_GS, I_D = 250 μA
V_GS = ± 30 V
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 4 A
V_DS = 20 V, I_D = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related^b
Effective Output Capacitance, Time
Related^c
C_iss
C_oss
C_rss
C_o(er)
C_o(tr)
V_GS = 0 V,
V_DS = 100 V,
f = 1 MHz
V_DS = 0 V to 400 V, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
V_GS = 10 V
I_D = 4 A, V_DS = 400 V
V_DD = 400 V, I_D = 4 A
R_g = 9.1 , V_GS = 10 V
f = 1 MHz, open drain
MIN. TYP.
500
-
-
0.58
3
-
-
-
-
-
-
-
-
0.70
-
3
-
527
-
52
-
8
-
46
-
64
-
15
-
4
-
7
-
13
-
16
-
17
-
11
-
1.8
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
-
-
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V_SD
t_rr
Q_rr
I_RRM
T_J = 25 °C, I_S = 4 A, V_GS = 0 V
T_J = 25 °C, I_F = I_S = 4 A,
dI/dt = 100 A/μs, V_R = 20 V
-
-
-
308
-
1.8
-
11
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C_oss(er) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
c. C_oss(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 % to 80 % V_DSS.
MAX. UNIT
-
-
5
± 100
1
10
0.85
-
V
V/°C
V
nA
μA

S
-
-
-
pF
-
-
30
-
nC
-
26
32
ns
34
22
-

8
A
32
1.2
V
-
ns
-
μC
-
A
S12-1375-Rev. A, 18-Jun-12
2
Document Number: 91521
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