IRF840 Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRF840, SiHF840
Vishay Siliconix
V_GS
Top
15 V
10 V
8.0 V
10¹
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
10⁰
91070_01
4.5 V
20 µs Pulse Width
T_C = 25 °C
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
150 °C
10¹
25 °C
10⁰
4
91070_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
V_GS
Top 15 V
10¹
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10⁰
10⁰
20 µs Pulse Width
T_C = 150 °C
10¹
91070_02
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
3.0
I_D = 8.0 A
V_GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91070_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
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