IMBD4448-V Datasheet, PDF (3/6 Pages) Vishay Siliconix – Small Signal Switching Diode

IMBD4448-V
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100 ^Tj ^{= 100 ° C}
10
25 ° C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18689
V _F - Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160 180 200
18663
T_amb - Ambient Temperature ( °C )
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
10000
1000
T_j = 25 ° C
f = 1 kHz
100
10
1
0.01
0.1
1
10
100
18662
I_F - Forward Current ( mA )
Figure 2. Dynamic Forward Resistance vs. Forward Current
1.1
T_j = 25 ° C
f = 1 MHz
1.0
0.9
0.8
0.7
0
18664
2
4
6
8 10
V_R - Reverse Voltage ( V )
Figure 4. Relative Capacitance vs. Reverse Voltage
100
ν= 0
10
0.1
0.2
1
0.5
I _{ν = t p /T}
T = 1/f_p
I _FRM
t_p
t
T
18709
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10
t_p - Pulse Length ( s )
Figure 5. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Document Number 85732
Rev. 1.4, 07-Apr-05
www.vishay.com
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