IMBD4448-V Datasheet, PDF (2/6 Pages) Vishay Siliconix – Small Signal Switching Diode

IMBD4448-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Test condition
Storage temperature range
1) _{Device on fiberglass substrate, see layout (SOT-23).}
Symbol
R_thJA
T_j
T_S
Value
450¹⁾
150
- 65 to + 150
Unit
°C/W
°C
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
(see figures)
I_F = 5 mA
I_F = 100 mA
V_R = 70 V
V_R = 70 V, T_j = 150 °C
V_R = 25 V, T_j = 150 °C
V_F = V_R = 0
I_F = 10 mA, I_R = 10 mA,
V_R = 6 V, R_L = 100 Ω
Layout for R_thJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Symbol
Min
Typ.
Max
Unit
V_F
0.62
0.72
V
V_F
1.0
V
I_R
2.5
µA
I_R
50
µA
I_R
30
µA
C_tot
4
pF
t_rr
4
ns
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
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2
Document Number 85732
Rev. 1.4, 07-Apr-05