ILD1 Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR OPTOCOUPLER

ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
lead
Test condition
I_F = 60 mA
V_R = 6.0 V
V_R = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
V_F
1.25
1.65
V
I_R
0.01
10
µA
C_O
25
pF
T_thJL
750
K/W
Output
Parameter
Collector-emitter capacitance
Collector-emitter leakage
current
Saturation voltage, collector-
emitter
DC forward current gain
DC forward current gain
saturated
Thermal resistance, junction to
lead
Test condition
V_CE = 5.0 V, f = 1.0 MHz
V_VCE = 10 V
I_CE = 1.0 mA, I_B = 20 µA
V_CE = 10 V, I_B = 20 µA
V_CE = 0.4 V, I_B = 20 µA
Symbol
Min
C_CE
I_CEO
V_CESAT
HFE
200
HFE_sat
120
R_thjl
Typ.
Max
Unit
6.8
pF
5.0
50
nA
0.25
0.4
V
650
1800
400
600
500
K/W
Coupler
Parameter
Capacitance (input-output)
Test condition
V_IO = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
C_IO
0.8
pF
Current Transfer Ratio
Parameter
Current Transfer Ratio
(collector-emitter saturated)
Test condition
I_F = 10 mA, V_CE = 0.4 V
Current Transfer Ratio
(collector-emitter)
I_F = 10 mA, V_CE = 10 V
Part
Symbol
Min
Typ.
Max
Unit
ILD1
CTR_CEsat
75
%
ILQ1
ILD2
CTR_CEsat
170
%
ILQ2
ILD5
CTR_CEsat
100
%
ILQ5
ILD1
CTR_CE
20
80
300
%
ILQ1
ILD2
CTR_CE
100
200
500
%
ILQ2
ILD5
ILQ5
CTR_CE
50
130
400
%
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
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