ILD1 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR OPTOCOUPLER

ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V_R
I_F
I_FSM
P_diss
Value
6.0
60
2.5
100
1.3
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter reverse voltage
Collector current
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Part
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
Symbol
V_CER
V_CER
V_CER
V_CER
V_CER
V_CER
I_C
I_C
P_diss
Value
50
50
70
70
70
70
50
400
200
2.6
Unit
V
V
V
V
V
V
mA
mA
mW
mW/°C
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
Creepage
Clearance
Isolation resistance
Package power dissipation
Test condition
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
2.0 mm from case bottom
Symbol
V_ISO
R_IO
R_IO
P_tot
T_stg
T_amb
T_j
T_sld
Value
5300
≥ 7.0
≥ 7.0
10¹²
10¹¹
250
3.3
- 40 to + 150
- 40 to + 100
100
260
Unit
V_RMS
mm
mm
Ω
Ω
mW
mW/°C
°C
°C
°C
°C
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2
Document Number 83646
Rev. 1.4, 05-Nov-04