GBU8J-E3-22 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

GBU8A thru GBU8M
Vishay General Semiconductor
100
10
1
0.1
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
50 - 400 V
600 - 1000 V
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
T_J = 150 °C
100
10
10
T_J = 125 °C
1
50 - 400 V
600 - 1000 V
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.075
(1.9.) R
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.710 (18.0)
0.690 (17.5)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead by beveled corner
Document Number: 88616 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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