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GBU8J-E3-22 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier
GBU8A thru GBU8M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum
instantaneous forward
8.0 A
VF
voltage drop per diode
1.0
V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction
capacitance per diode
4 V, 1 MHz
CJ
211
94
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GBU8A GBU8B GBU8D GBU8G
Typical thermal resistance
RθJA (2)
RθJC (1)(3)
20
4.0
GBU8J
GBU8K GBU8M
UNIT
°C/W
Notes:
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on P.C.B., 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g)
GBU8J-E3/45
3.857
GBU8J-E3/51
3.857
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
Heatsink Mounting, TC
6.0
4.0
2.0 P.C.B. Mounting, TA
0.47 x 0.47" (12 x 12 mm) Copper
Pads 0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
0
0
25
50
75
100 125 150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
250
TJ = 150 °C
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 88616
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Dec-08