GB75YF120UT Datasheet, PDF (3/10 Pages) Vishay Siliconix – IGBT Fourpack Module, 75 A

GB75YF120UT
IGBT Fourpack Module, 75 A _{Vishay High Power Products}
THERMISTOR ELECTRICAL SPECIFICATIONS (T = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Resistance
R₂₅
T_J = 100 °C
4538
468.6
5000
493.3
B value
B
T_J = 25 °C/50 °C
3307 3375
MAX.
5495
518
3443
UNITS
Ω
°K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
Junction to case IGBT
R_thJC (IGBT)
-
Junction to case DIODE
R_thJC (DIODE)
-
Case to sink, flat, greased surface
Mounting torque (M5)
R_thCS (MODULE)
-
2.7
Weight
-
TYP.
-
-
0.02
-
170
MAX.
0.26
0.56
-
3.3
-
UNITS
°C/W
Nm
g
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120
I_C (A)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
T_C (°C)
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
10
1
0.1
0.01
1
1000
10
100
1000
V_CE (V)
Fig. 3 - Forward SOA
T_C = 25 °C; T_J ≤ 150 °C
10000
100
10
1
10
100
1000
10000
V_CE (V)
Fig. 4 - Reverse Bias SOA
T_J = 150 °C; V_GE = 15 V
Document Number: 93172
Revision: 13-Jan-10
For technical questions, contact: [e-mail]
www.vishay.com
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