GB75YF120UT Datasheet, PDF (2/10 Pages) Vishay Siliconix – IGBT Fourpack Module, 75 A

GB75YF120UT
Vishay High Power Products ^{IGBT Fourpack Module, 75 A}
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V_BR(CES)
V_GE = 0 V, I_C = 500 μA
I_C = 75 A, V_GE = 15 V
Collector to emitter voltage
V_CE(ON)
I_C = 100 A, V_GE = 15 V
I_C = 75 A, V_GE = 15 V, T_J = 125 °C
I_C = 100 A, V_GE = 15 V, T_J = 125 °C
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
V_GE(th)
ΔV_GE(th)/ΔT_J
I_CES
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 1 mA (25 °C to 125 °C)
V_GE = 0 V, V_CE = 1200 V
V_GE = 0 V, V_CE = 1200 V, T_J = 125 °C
I_F = 75 A
Diode forward voltage drop
I_F = 100 A
V_FM
I_F = 75 A, T_J = 125 °C
I_F = 100 A, T_J = 125 °C
Gate to emitter leakage current
I_GES
V_GE = ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
-
-
-
-
-
TYP.
-
3.4
3.8
4.0
4.53
5.0
- 11
7
580
3.7
4.1
3.7
4.2
-
MAX. UNITS
-
4.0
4.5
V
4.5
5.1
6.0
- mV/°C
250
μA
2000
4.9
5.5
V
5.1
5.7
± 200 nA
SWITCHING CHARACTERISTICS (T = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Q_G
Q_GE
Q_GC
I_C = 75 A
V_CC = 600 V
V_GE = 15 V
Turn-on switching loss
Turn-off switching loss
Total switching loss
E_on
I_C = 75 A, V_CC = 600 V
E_off
V_GE = 15 V, R_g = 5 Ω, L = 500 μH
E_tot
T_J = 25 °C ⁽¹⁾
Turn-on switching loss
Turn-off switching loss
Total switching loss
E_on
I_C = 75 A, V_CC = 600 V
E_off
V_GE = 15 V, R_g = 5 Ω, L = 500 μH
E_tot
T_J = 125 °C ⁽¹⁾
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
t_d(on)
t_r
t_d(off)
t_f
RBSOA
SCSOA
I_rr
t_rr
Q_rr
I_C = 75 A, V_CC = 600 V
V_GE = 15 V, R_g = 5 Ω, L = 500 μH
T_J = 125 °C
T_J = 150 °C, I_C = 200 A
R_g = 10 Ω, V_GE = 15 V to 0 V
T_J = 150 °C
V_CC = 900 V, V_P = 1200 V
R_g = 10 Ω, V_GE = 15 V to 0 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
V_CC = 200 V
I_F = 50 A
dI/dt = 10 A/μs
T_J = 125 °C
Note
(1) _{Energy losses include “tail” and diode reverse recovery}
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
630
65
250
1.74
1.46
3.20
2.44
2.35
4.79
268
43
308
127
MAX. UNITS
-
-
nC
-
-
-
-
mJ
-
-
-
-
-
ns
-
-
Fullsquare
10
-
-
μs
-
13
18
A
-
19
23
-
132 189
ns
-
200 270
-
858 1700
nC
-
1900 3105
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 93172
Revision: 13-Jan-10