G3SBA20 Datasheet, PDF (3/4 Pages) General Semiconductor – GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
100
100
10
1
10
0.1
0.01
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
T_A = 125 °C
10
10
1
1
0.1
T_A = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GBU
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.075
(1.9.) R
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.100 (2.54)
0.085 (2.16)
0.043 (1.10)
0.035 (0.90)
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.075 (1.90)
0.080 (2.03)
0.065(1.65)
0.190 (4.83)
0.210 (5.33)
0.022 (0.56)
0.018 (0.46)
Polarity shown on front side of case, positive lead by beveled corner
Document Number: 88606 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
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