G3SBA20 Datasheet, PDF (2/4 Pages) General Semiconductor – GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL G3SBA20
Maximum instantaneous forward voltage per diode 2.0 A
V_F
Maximum DC reverse current at rated DC
blocking voltage per diode
T_J = 25 °C
T_J = 125 °C
I_R
G3SBA60
1.00
5.0
400
G3SBA80
UNIT
V
µA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G3SBA20
Typical thermal resistance
R_θJA ⁽²⁾
R_θJC ⁽¹⁾
Notes:
G3SBA60
26
5.0
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
G3SBA80
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
G3SBA60-E3/45
3.404
45
G3SBA60-E3/51
3.404
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
4
Heatsink Mounting, T_C
3
2
P.C.B. Mounting, T_A
1
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
100
80
60
40
20
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88606
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Revision: 15-Dec-08