ESH3B_09 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

New Product
ESH3B, ESH3C & ESH3D
Vishay General Semiconductor
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
0.1
T_J = 25 °C
1000
100
10
0.01
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
10
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.185 (4.69) MAX.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.320 REF.
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 84648
Revision: 21-Jul-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
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