ESH3B_09 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

New Product
ESH3B, ESH3C & ESH3D
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
DO-214AB (SMC)
PRIMARY CHARACTERISTICS
I_F(AV)
3.0 A
V_RRM
100 V, 150 V, 200 V
t_rr
25 ns
V_F
0.90 V
T_J max.
175 °C
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converter and
inverter for both consumer and automotive.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals: Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH3B
Device marking code
EHB
Maximum repetitive peak reverse voltage
V_RMM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current (fig. 1)
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
ESH3C
EHC
150
105
150
3.0
125
- 55 to + 175
ESH3D
EHD
200
140
200
UNIT
V
V
V
A
A
°C
Document Number: 84648
Revision: 21-Jul-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
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