ESH1PB Datasheet, PDF (3/4 Pages) Vishay Siliconix – Vishay General Semiconductor

New Product
ESH1PB, ESH1PC & ESH1PD
Vishay General Semiconductor
100
10
Tj = 175 °C
Tj = 150 °C
1
0.1
Tj = 25 °C
Tj = 125 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
10
1
0.1
Tj = 175 °C
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
1000
100
10
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode band
0.012 (0.30) REF
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.053 (1.35)
0.041 (1.05)
0.103 (2.60)
0.087 (2.20)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30)
0.000 (0.00)
0.045 (1.15)
0.033 (0.85)
0.018 (0.45)
0.006 (0.15)
0.100
(2.54)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.050
(1.27)
Document Number: 88895
Revision: 25-Jun-07
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