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ESH1PB Datasheet, PDF (1/4 Pages) Vishay Siliconix – Vishay General Semiconductor
New Product
ESH1PB, ESH1PC & ESH1PD
Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
eSMPTM Series
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
trr
VF
Tj max.
1A
100 V, 150 V, 200 V
25 ns
0.90 V
175 °C
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Low thermal resistance
• Meets MSL level 1 per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of ac-to-ac and dc-to-dc
converters in high temperature conditions for both
consumer and automotive applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL-94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1PB
Device marking code
PB
Maximum repetitive peak reverse voltage
VRRM
100
Maximum average forward rectified current (Fig. 1)
IF(AV)
Peak forward surge current 10 ms single half sine-
wave superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
ESH1PC
PC
150
1.0
50
- 55 to + 175
ESH1PD
PD
200
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward at IF = 0.7 A, Tj = 25 °C
voltage (1)
at IF = 1 A, Tj = 25 °C
Maximum reverse current at rated Tj = 25 °C
VR (1) voltage
Tj = 125 °C
Maximum reverse current
at VR = 20 V, Tj = 150 °C
SYMBOL VALUE
VF
0.86
0.90
IR
1.0
25
IR
50
UNIT
V
µA
µA
Document Number: 88895
Revision: 25-Jun-07
www.vishay.com
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