ESH1B-M3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

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ESH1B-M3, ESH1C-M3, ESH1D-M3
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
T_L Measured
at the Cathode Band Terminal
0.2
0
95 105 115 125 135 145 155 165 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_J = 125 °C
10
T_J = 150 °C
1 ^TJ ^{= 175 °C}
T_J = 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
50
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_J = 175 °C
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
T_J = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Leakage Characteristics
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 19-Feb-15
3
Document Number: 89401
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