ESH1B-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

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ESH1B-M3, ESH1C-M3, ESH1D-M3
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
DO-214AC (SMA)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
1.0 A
V_RRM
100 V, 150 V, 200 V
t_rr
V_F
T_J max.
25 ns
0.90 V
175 °C
Package
DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling
for ultrafast switching speeds AC/AC and DC/DC
converters in high temperature conditions for both
consumer applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1B
Device marking code
EHB
Maximum repetitive peak reverse voltage
V_RRM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current at T_L = 150 °C I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
ESH1C
EHC
150
105
150
1.0
50
-55 to +175
ESH1D
EHD
200
140
200
UNIT
V
V
V
A
A
°C
Revision: 19-Feb-15
1
Document Number: 89401
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000