ES2F Datasheet, PDF (3/4 Pages) General Semiconductor – SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

ES2F & ES2G
Vishay General Semiconductor
100
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
200
160
at 5 A, 50 A/µs
120
80
40
0
25
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
t_rr
Q_rr
50
75
100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
T_J = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
1
10
100
1000
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.085 MAX.
(2.159 MAX.)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88588 For technical questions within your region, please contact one of the following:
Revision: 20-Nov-07
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