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ES2F Datasheet, PDF (2/4 Pages) General Semiconductor – SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER
ES2F & ES2G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
ES2F
ES2G
Maximum instantaneous forward voltage (1) 2.0 A
VF
1.1
Maximum reverse current at VRRM
TA = 25 °C
TA = 100 °C
IR
10
200
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
trr
50
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
IRM
3.0
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
Qrr
50
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UNIT
V
µA
ns
ns
A
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2F
ES2G
Maximum thermal resistance (1)
RθJA
75
RθJL
25
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ES2G-E3/52T
0.096
52T
ES2G-E3/5BT
0.096
5BT
ES2GHE3/52T (1)
0.096
52T
ES2GHE3/5BT (1)
0.096
5BT
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.0
Resistive or Inductive Load
60
8.3 ms Single Half Sine-Wave
50
at TL = 110 °C
2.0
40
30
1.0
20
0
80
90 100 110 120 130 140 150
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: Document Number: 88588
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 20-Nov-07