ES2A Datasheet, PDF (3/4 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

ES2A thru ES2D
Vishay General Semiconductor
100
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
60
T_J = 25 °C
f = 1.0 MHz
50
V_sig = 50 mVp-p
40
30
20
10
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10 000
1000
100
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
10
1
T_J = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.085 MAX.
(2.159 MAX.)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88587 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
[e-mail], [e-mail], [e-mail]
www.vishay.com
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