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ES2A Datasheet, PDF (2/4 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS
ES2A thru ES2D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL ES2A
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A,
lrr = 0.25 A
trr
Maximum reverse recovery time
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/µs,
Ir = 10 % IRM
TJ = 25 °C
TJ = 100 °C
trr
Maximum stored charge
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/µs,
Ir = 10 % IRM
TJ = 25 °C
TJ = 100 °C
Qrr
Typical junction capacitance
4.0 V, 1 MHz
CJ
Note:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
ES2B ES2C
20
30
50
10
25
18
ES2D
UNIT
ns
ns
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL ES2A
Typical thermal resistance (1)
Note:
RθJA
RθJL
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
ES2B ES2C
75
20
ES2D
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ES2D-E3/52T
0.096
52T
ES2D-E3/5BT
0.096
5BT
ES2DHE3/52T (1)
0.096
52T
ES2DHE3/5BT (1)
0.096
5BT
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.0
60
8.3 ms Single Half Sine-Wave
50
at TL = 110 °C
2.0
40
30
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
80 90 100 110 120 130 140 150
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
10
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: Document Number: 88587
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 27-Aug-07