DG444B Datasheet, PDF (3/7 Pages) Vishay Siliconix – Improved Quad SPST CMOS Analog Switches

New Product
DG444B/445B
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Parameter
Analog Switch
Analog Signal Range^d
Drain-Source On-Resistance^d
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V− = 0 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^e
Temp^a
D Suffix
−40 to 85_C
Min^b Typ^c Max^b
V_ANALOG
r_DS(on)
I_S = 1 mA, V_D = 3 V, 8 V
Full
0
Room
Full
12
90
160
200
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
t_ON
R_L = 1 kW , C_L = 35 pF, V_S = 8 V
Room
t_OFF
See Figure 2
Room
Q
C_L = 1 nF, V_gen = 6 V, R_gen = 0 W
Room
120
300
60
200
4
Positive Supply Current
I+
Negative Supply Current
I−
Room
1
Full
5
V_IN = 0 or 5 V
Room
−1
Full
−5
Logic Supply Current
I_IN
V_L = 5.25 V, V_IN = 0 or 5 V
Room
Full
1
5
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V_IN = input voltage to perform proper function.
Unit
V
W
ns
pC
mA
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r_DS(on) vs. V_D and Power Supply Voltages
110
100
90
"5 V
80
70
60
"10 V
50
"15 V
40
"20 V
30
20
10
−20 −16 −12 −8 −4 0 4 8
V_D − Drain Voltage (V)
12 16 20
r_DS(on) vs. V_D and Temperature
100
V+ = 15 V
90
V− = −15 V
80
70
60
125_C
50
85_C
40
25_C
30
−55_C
20
10
0
−15 −10
−5
0
5
10
15
V_D − Drain Voltage (V)
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
www.vishay.com
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