DG444B Datasheet, PDF (2/7 Pages) Vishay Siliconix – Improved Quad SPST CMOS Analog Switches

DG444B/445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
New Product
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V_L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND −0.3 V) to (V+) + 0.3 V
Digital Inputs^a V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIP^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow Body SOIC^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
QFN-16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 8 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Analog Switch
Analog Signal Range^d
Drain-Source On-Resistance
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V− = −15 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^e
V_ANALOG
r_DS(on)
I_S = 1 mA, V_D = #10 V
Switch Off Leakage Current
I_S(off)
I_D(off)
V_D = #14 V, V_S = #14 V
Channel On Leakage Current
I_D(on)
V_S = V_D = #14 V
Digital Control
Input Voltage Low
Input Voltage High
Input Current V_IN Low
Input Current V_IN High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection^e
Off Isolation^e
Crosstalk (Channel-to-Channel)^d
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
V_INL
V_INH
I_INL
I_INH
t_ON
t_OFF
Q
OIRR
X_TALK
C_S(off)
C_D(off)
C_D(on)
V_IN under test = 0.8 V, All Other = 2.4 V
V_IN under test = 2.4 V, All Other = 0.8 V
R_L = 1 kW , C_L = 35 pF
V_S = "10 V, See Figure 2
C_L = 1 nF, V_S = 0 V
V_gen = 0 V, R_gen = 0 W
R_L = 50 W , C_L = 15 pF, V_S = 1 V_RMS
f = 100 kHz
V_S = 0 V, f = 100 kHz
V_S V_D = 0 V, f = 1 MHz
Positive Supply Current
I+
Negative Supply Current
I−
Logic Supply Current
I_IN
V_IN = 0 or 5 V
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2
Limits
−40 to 85_C
Temp^a Min^b Typ^c Max^b
Unit
Full
−15
15
V
Room
Full
45
80
95
W
Room
−0.5
"0.01
0.5
Full
−5
5
Room
−0.5
"0.01
0.5
Full
−5
5
nA
Room
−0.5
#0.02
0.5
Full
−10
10
Full
Full
2.4
0.8
V
Full
−1
−0.01
1
mA
Full
−1
0.01
1
Room
Room
Room
Room
Room
Room
Room
Room
300
200
ns
1
pC
90
dB
95
5
5
pF
16
Room
Full
Room
−1
Full
−5
Room
Full
1
5
mA
1
5
Document Number: 72626
S-32554—Rev. A, 15-Dec-03