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DG417_08 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Precision CMOS Analog Switches
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SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
DG417/418/419
Vishay Siliconix
VL
VIN
GND
Level
Shift/
Drive
S
V-
V+
D
V-
Figure 1.
SPECIFICATIONSa
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off Leakage Current
Channel Off Leakage
Current
Digital Control
Input Current VIN Low
Input Current VIN High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Symbol
VANALOG
rDS(on)
IS(off)
ID(off)
ID(on)
IIL
IIH
tON
tOFF
tTRANS
tD
Q
CS(off)
CD(off)
CD(on)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V
VS = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
DG417
DG418
DG419
DG417
DG418
DG419
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
RL = 300 Ω, CL = 35 pF
VS = ± 10 V
See Switching Time
Test Circuit
DG417
DG418
DG417
DG418
RL = 300 Ω, CL = 35 pF
VS1 = ± 10 V, VS2 = ± 10 V
DG419
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = ± 10 V
DG419
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
DG417
DG418
DG417
DG418
DG419
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Typc
20
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
0.005
0.005
100
60
13
60
8
8
30
35
A Suffix
D Suffix
- 55 to 125 °C - 40 to 85 °C
Mind Maxd Mind Maxd Unit
- 15 15 - 15 15 V
35
45
35
45
Ω
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
5
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
5
- 0.75 0.75 - 0.75 0.75
- 60 60 - 12 12
nA
- 0.4 0.4 - 0.4 0.4
- 40 40 - 10 10
- 0.75 0.75 - 0.75 0.75
- 60 60 - 12 12
- 0.5 0.5 - 0.5 0.5
µA
- 0.5 0.5 - 0.5 0.5
175
175
250
250
145
145
210
210
175
175 ns
250
250
5
5
pC
pF
Document Number: 70051
S-71241–Rev. F, 25-Jun-07
www.vishay.com
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