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| DG417B_08 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches | |||
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SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
VL
VIN
GND
V-
Level
Shift/
Drive
Figure 1.
DG417B/418B/419B
Vishay Siliconix
S
V-
V+
D
SPECIFICATIONSa
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current, VIN Low
Input Current, VIN High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolatione
Channel-to-Channel
Crosstalke
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
VANALOG
rDS(on)
IS = - 10 mA, VD = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
IS(off)
ID(off)
V+ = 16.5, V- = - 16.5 V DG417B
VD = ± 15.5 V, VS = ± 15.5 V DG418B
DG419B
ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
DG417B
DG418B
DG419B
IIL
IIH
tON
tOFF
tTRANS
tD
Q
OIRR
RL = 300 Ω, CL = 35 pF
VS = ± 10 V, See Switching
Time Test Circuit
DG417B
DG418B
DG417B
DG418B
RL = 300 Ω, CL = 35 pF
VS1 = ± 10 V, VS2 = ± 10 V
DG419B
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = ± 10 V
DG419B
CL = 10 nF
Vgen = 0 V, Rgen = 0 Ω
RL = 50 Ω, CL = 5 pF,
f = 1 MHz
XTALK
DG419B
Tempb
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Typc
15
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
62
53
60
16
4
- 86
- 87
A Suffix
D Suffix
- 55 to 125 °C - 40 to 85 °C
Mind Maxd Mind Maxd Unit
- 15 15 - 15 15 V
25
34
25
29
Ω
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
5
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
5
- 0.75 0.75 - 0.75 0.75
- 60 60 - 12 12
nA
- 0.4 0.4 - 0.4 0.4
- 40 40 - 10 10
- 0.75 0.75 - 0.75 0.75
- 60 60 - 12 12
- 0.5 0.5 - 0.5 0.5
µA
- 0.5 0.5 - 0.5 0.5
89
106
80
88
87
96
3
3
89
99
80
86
87 ns
93
pC
dB
Document Number: 72107
S-71009âRev. C, 14-May-07
www.vishay.com
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