DG401B Datasheet, PDF (3/10 Pages) Vishay Siliconix – Low-Power, High-Speed CMOS Analog Switches

New Product
DG401B/403B/405B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs^a V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . (V−) − 0.3 V to (V+) +0.3 V
or 30 mA, whichever occurs first
Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms 10% duty) . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature (DJ, DY Suffix) . . . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)^b
16-Pin Plastic DIP^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin SOIC^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source On-Resistance
D Drain-Source On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current V_IN Low
Input Current V_IN High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay (DG403B)
Charge Injection
Off Isolation Reject Ratio
Channel-to-Channel Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V− = −15 V, V_IN = 2.4 V, 0.8 V^f
Temp^b
Limits
−40 to 85_C
Min^d Typ^c Max^d
Unit
V_ANALOG
r_DS(on)
Dr_DS(on)
I_S(off)
I_D(off)
I_D(on)
I_S = −10 mA, V_D = "10 V
V+ = 13.5 V, V− = −13.5 V
I_S = −10 mA, V_D = "5 V, 0 V
V+ = 16.5 V, V− = −16.5 V
V+ = 16.5, V− = −16.5 V
V_D = "15.5 V, V_S = #15.5 V
V+ = 16.5 V, V− = −16.5 V
V_S = V_D = "15.5 V
Full
−15
15
V
Room
Full
Room
Full
23
45
55
0.72
3
W
5
Room −0.5 −0.01
0.5
Hot
−5
5
Room −0.5 −0.01
0.5
Hot
−5
5
nA
Room
−1
−0.04
1
Hot
−10
10
I_IL
V_IN under test = 0.8 V, All Other = 2.4 V
Full
−1
0.005
1
mA
I_IH
V_IN under test = 2.4 V, All Other = 0.8 V
Full
−1
0.005
1
t_ON
R_L = 300 W , C_L = 35 pF
Room
100
150
t_OFF
See Figure 2
Room
60
100
ns
t_D
R_L = 300 W , C_L = 35 pF
Room
5
12
Q
C_L = 10,000 pF, V_gen = 0 V, R_gen = 0 W
Room
60
pC
OIRR
X_TALK
R_L = 100 W , C_L = 5 pF
f = 1 MHz
Room
Room
−81.7
−94.8
dB
C_S(off)
Room
12
C_D(off)
f = 1 MHz, V_S = 0 V
Room
12
pF
C_D, C_S(on)
Room
39
I+
I−
I_GND
V+ = 16.5 V, V− = −16.5 V
V_IN = 0 or 5 V
Room
Full
0.250
0.5
1
Room −0.5
0.25
Full
−1
mA
Room −0.5
0.25
Full
−1
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Document Number: 73069
S-42444—Rev. A, 10-Jan-05
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