DG2706 Datasheet, PDF (3/8 Pages) Vishay Siliconix – High Speed, Low Voltage, 3 Ω, Quad SPDT CMOS Analog Switch

DG2706
Vishay Siliconix
SPECIFICATIONS V+ = 3.15 V
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
Temp.^b
Limits
- 40 °C to 85 °C
Min.^d Typ.^c Max.^d
Unit
Analog Signal Range^e
V_ANALOG
R_DS(on)
Full
0
V+
V
On-Resistance
R_DS(on)
V+ = 3.15 V, I_NO/NC = 10 mA, V_COM = 1.0 V
Room
Full
3
5.5
6
R_ON Match
ΔR_(ON)
V+ = 3.15 V, I_NO/NC = 10 mA, V_COM = 1.0 V Room
0.3
Ω
R_ON Resistance Flatness
R_ON
Flatness
V+ = 3.15 V, I_NO/NC = 10 mA,
V_COM = 0 V, 1 V
Room
0.6
Channel Off Leakage
Current
I_NO/NC(off)
I_COM(off)
V+ = 3.6 V, V_NO/NC = 0.5 V/3 V,
V_COM = 3 V/0.5 V
Room
-5
Full
- 10
Room
-5
Full
- 10
5
10
5
nA
10
Channel-On Leakage
Current
Digital Control
Input High Voltage
Input Low Voltage
Input Current
Dynamic Characteristics
I_COM(on)
V_INH
V_INL
I_INL or I_INH
V+ = 3.6 V, V_NO/NC, V_COM = 3 V/0.5 V
V_IN = 0 or V+
Room - 10
Full
- 20
Full
1.65
Full
Full
-1
10
20
V
0.4
1
µA
Break-Before-Make Time
t_BBM
Room
1
Full
5
Enable Turn-On Time
t_ON(EN)
V_NO, V_NC = 1.5 V, R_L = 50 Ω, C_L = 35 pF
Room
Full
20
45
ns
55
Enable Turn-Off Time
t_OFF(EN)
Room
Full
15
35
45
Charge Injection^d
Off-Isolation^d
Crosstalk^{d, f}
Bandwidth^d
Total Harmonic Distortion^d
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
Power Supply
Q_INJ
OIRR
X_TALK
BW
THD
CS_NC(off)
CS_NO(on)
C_COM(on)
C_L = 1 nF, R_GEN = 0 Ω, V_NC/NO = 2 V
V+ = 3.15 V, f = 1 MHz, R_L = 50 Ω, C_L = 5 pF
V+ = 3.15 V, R_L = 50 Ω, C_L = 5 pF, - 3 dB
V+ = 3.15 V, R_LOAD = 600 Ω
V+ = 3.15 V, f = 1 MHz
Room
Room
Room
Room
Room
Room
3
- 70
- 90
190
0.02
16
15
31
pC
dB
MHz
%
pF
Power Supply Range
V+
Power Supply Current
I+
V_IN = 0 or V+
1.65
Full
4.3
V
1
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V_IN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68392
S-80991-Rev. A, 05-May-08
www.vishay.com
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