DG2517_08 Datasheet, PDF (3/8 Pages) Vishay Siliconix – 3-Ω, High Bandwidth, Dual SPDT Analog Switch

DG2517, DG2518
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V_IN = 0.8 or 2.0 V^e
Limits
- 40 °C to 85 °C
Temp.^a Min.^b Typ.^c Max.^b Unit
Analog Signal Range^d
On-Resistance
V_NO, V_NC,
V_COM
Full
0
R_ON
V+ = 4.2 V, V_COM = 3.5 V, I_NO/NC = 10 mA
Room
Full
V+
V
3
4.0
4.3
R_ON Flatness
R_ON Match Between Channels
R_ON
Flatness
ΔR_ON
V+ = 4.2 V, V_COM = 1, 2, 3.5 V
I_NO/NC = 10 mA
V+ = 4.2 V, V_COM = 3.5 V, I_NO/NC = 10 mA
Room
Full
Room
Full
1.1
1.4
1.6
Ω
0.1
0.3
0.4
Switch Off Leakage Current
I_NO(off),
Room
-1
I_NC(off)
V+ = 5.5 V
Full
- 10
I_COM(off)
V_NO, V_NC = 1 V/4.5 V, V_COM = 4.5 V/1 V
Room
Full
-1
- 10
1
10
1
nA
10
Channel-On Leakage Current
I_COM(on)
V+ = 5.5 V, V_COM = V_NO, V_NC = 1 V/4.5 V
Room
Full
-1
- 10
1
10
Digital Control
Input High Voltage^d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 V or V+
Full
2.0
Full
V
0.8
Full
4
pF
Full
1
1
µA
Turn-On Time
Turn-Off Time
t_ON
V+ = 4.2 V, V_NO or V_NC = 3 V
Room
Full
t_OFF
R_L = 300 Ω, C_L = 35 pF
Room
Full
12
25
45
8
20
ns
30
Break-Before-Make Time
Charge Injection^d
- 3 dB Bandwidth
Off-Isolation^d
Crosstalk^d
t_d
V_NO or V_NC = 3 V, R_L = 300 Ω, C_L = 35 pF Full
1
Q_INJ
C_L = 1 nF, V_GEN = 2.5 V, R_GEN = 0 Ω
Room
2
BW
0 dBm, C_L = 5 pF, R_L = 50 Ω
Room
242
OIRR
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz Room
f = 10 MHz Room
- 71
- 51
X_TALK
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz Room
f = 10 MHz Room
- 73
- 55
pC
MHz
dB
Source-Off Capacitance^d
Channel-On Capacitance^d
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
V_IN = 0 or V+, f = 1 MHz
Room
Room
Room
Room
8
8
35
35
pF
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
V_IN = 0 or V+
Full
0.01
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V_IN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
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