DG2517_08 Datasheet, PDF (2/8 Pages) Vishay Siliconix – 3-Ω, High Bandwidth, Dual SPDT Analog Switch

DG2517, DG2518
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference to GND
V+
IN, COM, NC, NO^a
- 0.3 to + 6
V
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 50
mA
± 200
Storage Temperature (D Suffix)
Power Dissipation (Packages)^b
MSOP-10^c
DFN-10^d
- 65 to 150
°C
320
mW
1191
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Range^d
On-Resistance
R_ON Flatness
R_ON Match Between Channels
Switch Off Leakage Current^f
Symbol
V_NO, V_NC,
V_COM
R_ON
R_ON
Flatness
ΔR_ON
I_NO(off),
I_NC(off)
I_COM(off)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V_IN = 0.5 or 1.4 V^e
V+ = 2.7 V, V_COM = 1.5 V
I_NO/NC = 10 mA
V+ = 2.7 V, V_COM = 1.5, 2 V
I_NO/NC = 10 mA
V+ = 2.7 V, V_COM = 1.5 V
I_NO/NC = 10 mA
V+ = 3.6 V, V_NO, V_NC = 0.3 V/ 3 V
V_COM = 3 V/0.3 V
Temp.^a
Limits
- 40 °C to 85 °C
Min.^b Typ.^c Max.^b
Unit
Full
0
V+
V
Room
Full
3.2
4.5
5.0
Room
Full
1.0
1.4
16
Ω
Room
Full
0.1
0.3
0.4
Room
-1
1
Full
- 10
10
Room
-1
Full
- 10
1
10
nA
Channel-On Leakage Current^f
I_COM(on)
V+ = 3.6 V, V_NO, V_NC = V_COM = 0.3 V/3 V
Room
Full
-1
- 10
1
10
Digital Control
Input High Voltage^d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
Full
1.4
Full
V
0.5
Full
4
pF
Full
1
1
µA
Turn-On Time
Turn-Off Time
t_ON
V+ = 2.7 V, V_NO or V_NC = 1.5 V
Room
Full
t_OFF
R_L = 300 Ω, C_L = 35 pF
Room
Full
15
30
50
10
25
ns
35
Break-Before-Make Time
Charge Injection^d
- 3 dB Bandwidth
t_d
V_NO or V_NC = 1.5 V, R_L = 300 Ω, C_L = 35 pF Full
1
Q_INJ
C_L = 1 nF, V_GEN = 1.5 V, R_GEN = 0 Ω
Room
1
BW
0 dBm, C_L = 5 pF, R_L = 50 Ω
Room
242
pC
MHz
Off-Isolation^d
Crosstalk^d
f = 1 MHz Room
- 71
OIRR
R_L = 50 Ω, C_L = 5 pF
f = 10 MHz Room
- 51
dB
X_TALK
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz Room
f = 10 MHz Room
- 73
- 55
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
V_IN = 0 or V+, f = 1 MHz
Room
Room
Room
Room
8
8
35
35
pF
Power Supply
Power Supply Current
I+
V_IN = 0 or V+
Full
0.01
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
VG_{IuNa=rainntpeuetdvoblyta5geV}
to perform proper function.
leakage testing, not production
tested.
www.vishay.com
2
Document Number: 74333
S-82589-Rev. B, 27-Oct-08