DG2501 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches

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DG2501, DG2502, DG2503
Vishay Siliconix
ELECTRICAL CHARACTERISTICS 3 V Supply
PARAMETER
Analog Switch
SYMBOL
TEST CONDITION
UNLESS OTHERWISE SPECIFIED,
V+ = 3 V
V_INH = 1.4 V, V_INL = 0.8 V ^a
Analog Signal Range ^e
V_ANALOG
Drain-Source On
Resistance
On-Resistance Matching
R_DS(on)
ΔR_on
V_S = 1.5 V, I_S = -1 mA
Switch Off Leakage
Current
Channel On Leakage
Current
Digital Control
Input, High Voltage
Input, Low Voltage
I_S/I_D(off)
I_D(on)
V_INH
V_INL
V+ = 3.3 V,
V_S = 0.3 V/3 V, V_D = 3 V/0.3 V
V+ = 3.3 V,
V_D = 0.3 V/3 V
Input Leakage
I_IN
V_IN = V_GND or V+
Digital Input Capacitance ^e
Dynamic Characteristics
Break-Before Make Time
C_IN
t_BBM
f = 1 MHz
DG2503 only, V_S1 = V_S2 = 1.5 V,
R_L = 300 Ω C_L = 35 pF
Turn-On Time
Turn-Off Time
t_ON
V_S = 1.5 V, R_L = 300 Ω, C_L = 35 pF
t_OFF
Charge Injection ^e
Off Isolation ^e
Cross Talk ^e
3 dB Bandwidth ^e
Source Off Capacitance ^e
Drain Off Capacitance ^e
Drain On Capacitance ^e
Power Requirements
Q_INJ
OIRR
X Talk
BW
C_S(off)
C_D(off)
C_D(on)
C_L = 1 nF, R_GEN = 0 Ω, V_S = 1.5 V
R_L = 50 Ω, C_L = 5 pF, f = 1MHz
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz, V_S = 1.5 V
Power Supply Current
I+
Digital Input 0 or V+
TEMP. ^b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Full
TYP. ^c
-
133
-
0.83
-
± 0.016
-
± 0.009
-
-
-
± 0.001
-
2
47
-
175
-
77
-
-0.7
-83
-85
510
2.9
2.8
7.8
0.001
-
-40 °C to 85 °C
MIN. ^d MAX. ^d
0
3
-
200
-
250
-
10
-
13
-0.4
+0.4
-1
+1
-0.4
+0.4
-1
+1
1.4
-
-
0.4
-
-
-0.1
+0.1
-
-
10
-
10
-
-
220
-
250
-
100
-
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
UNIT
V
Ω
nA
V
μA
pF
ns
pC
dB
MHz
pF
μA
S14-1059-Rev. A, 19-May-14
3
Document Number: 62962
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000