DG201BMIL Datasheet, PDF (3/12 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

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DG201BMIL, DG202BMIL
Vishay Siliconix
SPECIFICATIONS^a
PARAMETER
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
R_DS(on) Match
Source Off Leakage Current
SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
V+ = 15 V, V- = - 15 V
V_IN = 2.4 V, 0.8 V^f
V_ANALOG
R_DS(on)
R_DS(on)
I_S(off)
V_D = ± 10 V, I_S = 1 mA
V_S = ± 14 V, V_D = ± 14 V
Drain Off Leakage Current
I_D(off)
V_S = ± 14 V, V_D = ± 14 V
Drain On Leakage Current
Digital Control
High Input Voltage
Low Input Voltage
Input Current
Input Capacitance
Dynamic Characteristics
I_D(on)
V_INH
V_INL
I_INH or I_INL
C_in
V_S = ± 14 V, V_D = ± 14 V
V_INH or V_INL
Turn-On Time
Turn-Off Time
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
Power Supply
t_ON
t_Off
Q
C_S(off)
C_D(off)
C_D(on)
OIRR
X_TALK
V_S = 2 V
see switching time test circuit
C_L = 1000 pF, V_g = 0 V, R_g = 0 
V_S = 0 V, f = 1 MHz
V_D = V_S = 0 V, f = 1 MHz
C_L = 15 pF, R_L = 50 ,
V_S = 1 V_RMS, f = 100 kHz
Positive Supply Current
I+
Negative Supply Current
I-
V_IN = 0 V or 5 V
Power Supply Range for
Continuous Operation
V_OP
TEMP.^b
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
Room
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
Full
TYP.^c
-
45
-
2
± 0.01
-
± 0.01
-
± 0.02
-
-
-
-
5
120
-
65
-
1
5
5
16
90
95
-
-
-
-
-
A SUFFIX
- 55 °C to 125 °C
MIN.^d
MAX.^d
UNIT
- 15
15
V
-
85
-
100

-
-
- 0.5
0.5
- 20
20
- 0.5
0.5
nA
- 20
20
- 0.5
0.5
- 40
40
2.4
-
V
-
0.8
-1
1
μA
-
-
pF
-
300
-
-
ns
-
200
-
-
-
-
pC
-
-
-
-
pF
-
-
-
-
dB
-
-
-
50
-
100
μA
-1
-
-5
-
± 4.5
± 22
V
S12-0631-Rev. A, 19-Mar-12
3
Document Number: 63374
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