DG200A Datasheet, PDF (3/5 Pages) TEMIC Semiconductors – Monolithic Dual SPST CMOS Analog Switch

DG200A_MIL
Vishay Siliconix
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
Source Off
Leakage Current
Drain Off
Leakage Current
Channel On
Leakage Current^f
Digital Control
Symbol
V_ANALOG
r_DS(on)
I_S(off)
I_D(off)
I_D(on)
Input Current with
Input Voltage High
I_INH
Input Current with
Input Voltage Low
I_INL
Dynamic Characteristics
Turn-On Time
t_ON
Turn-Off Time
t_OFF
Charge Injection
Q
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
Crosstalk
(Channel-to-Channel)
C_S(off)
C_D(off)
C_D(on) +
C_S(On)
OIRR
X_TALK
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
V_IN = 2.4 V, 0.8 V^f
V_D = "10 V, I_S = –1 mA
V_S = "14 V, V_D = #14 V
V_D = "14 V, V_S = #14 V
V_S = V_D = "14 V
V_IN = 2.4 V
V_IN = 15 V
V_IN = 0 V
See Switching Time Test Circuit
C_L = 1000 pF, V_g = 0 V
R_g = 0 W
f = 140 kHz
V_IN = 5 V
V_S = 0 V
V_D = 0 V
V_D = V_S = 0 V, V_IN = 0 V
V_IN = 5 V, R_L = 75 W
V_S = 2 V, f = 1 MHz
Both Channels On or Off
V_IN = 0 V and 2.4 V
Temp^b
Limits
–55 to 125_C
Min^c
Typ^d
Max^c
Unit
Full
Room
Full
Room
Full
Room
Full
Room
Full
–15
–2
–100
–2
–100
–2
–200
45
"0.01
"0.01
"0.1
15
V
70
100
W
2
100
2
100
nA
2
200
Room
Full
Room
Full
Room
Full
–0.5
–1
–0.5
–1
0.0009
0.005
0.5
1
mA
–0.0015
Room
Room
Room
Room
Room
Room
Room
Room
440
1000
ns
340
425
–10
pC
9
9
pF
25
75
dB
90
Room
Room
–1
0.8
–0.23
2
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
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