DFS Datasheet, PDF (3/4 Pages) Formosa MS – Case No. DFS Device

DF005S thru DF10S
Vishay General Semiconductor
10
1
0.1
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
T_J = 125 °C
1
0.1
T_J = 50 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.205 (5.2)
0.195 (5.0)
Case Style DFS
0.047 (1.20)
0.040 (1.02)
Mounting Pad La yout
0.047 MIN.
(1.20 MIN.)
0.335 (8.51)
0.320 (8.13) 45°
0.130 (3.3) ^{0.013 (0.330)}
0.120 (3.05) ^{0.009 (0.241)}
0.404 (10.3)
0.386 (9.80)
0.255 (6.5)
0.245 (6.2)
0.060 MIN.
(1.52 MIN.)
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.060 (1.524)
0.040 (1.016) 0.013 (0.330)
0.003 (0.076)
Document Number: 88573 For technical questions within your region, please contact one of the following:
Revision: 30-Jan-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
3