DFS Datasheet, PDF (2/4 Pages) Formosa MS – Case No. DFS Device

DF005S thru DF10S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
V_F
1.1
V
Maximum DC reverse
current at rated DC blocking
voltage per diode
T_A = 25 °C
T_A = 125 °C
I_R
5.0
500
µA
Typical junction
capacitance per diode ⁽¹⁾
C_J
25
pF
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Typical thermal resistance ⁽¹⁾
R_θJA
R_θJL
40
15
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
DF06S-E3/45
0.399
45
DF06S-E3/77
0.399
77
BASE QUANTITY
50
1500
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
1.0
60 Hz
Resistive or
Inductive Load
0.5
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
60
T_J = 150 °C
Single Sine-Wave
50
40
30
20
10
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 88573
[e-mail], [e-mail], [e-mail]
Revision: 30-Jan-08