CNY17G Datasheet, PDF (3/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output,with Base Connection

Optocoupler, Phototransistor Output,
with Base Connection
CNY17G
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
V_CE = 5 V, I_F = 10 mA
I_C/I_F
V_CE = 5 V, I_F = 1 mA
PART
CNY17G-1
CNY17G-2
CNY17G-3
CNY17G-4
CNY17G-1
CNY17G-2
CNY17G-3
CNY17G-2
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
TYP.
MAX.
80
125
200
320
200
UNIT
%
%
%
%
%
%
%
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
I_F
130
mA
Power dissipation
COUPLER
P_diss
265
mW
Rated impulse voltage
Safety temperature
V_IOTM
T_si
6
kV
150
°C
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, t_test = 1 s
Partial discharge test voltage -
lot test (sample test)
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb = 100 °C
V_IO = 500 V, T_amb = 150 °C
(construction test only)
SYMBOL
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
MIN.
1.6
6
1.3
10¹²
10¹¹
10⁹
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
300
250
Phototransistor
P_si (mW)
200
150
100
50
0
0
94 9182
IR-Diode
I_si (mA)
25 50 75 100 125 150
T_si - Safety Temperature (°C)
Fig. 1 - Derating Diagram
V_IOTM
V_Pd
V_IOWM
V_IORM
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
0
13930
t₁
t_Tr = 60 s
t₃ t_test t₄
t₂ t _stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
Document Number: 83886
Rev. 1.4, 08-May-08
For technical questions, contact: [e-mail]
www.vishay.com
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