CNY17F-3X007 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, No Base Connection

CNY17F
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Thermal resistance
Test condition
I_F = 60 mA
I_R = 10 µA
V_R = 6.0 V
V_R = 0 V, f = 1.0 MHz
Symbol
Min
V_F
V_BR
6.0
I_R
C_O
R_th
Typ.
Max
Unit
1.25
1.65
V
V
0.01
10
µA
25
pF
750
K/W
Output
Parameter
Collector-emitter capacitance
Base - collector capacitance
Emitter - base capacitance
Thermal resistance
Test condition
V_CE = 5.0 V, f = 1.0 MHz
V_CE = 5.0 V, f = 1.0 MHz
V_CE = 5.0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
C_CE
5.2
pF
C_BC
6.5
pF
C_EB
7.5
pF
R_th
500
K/W
Coupler
Parameter
Saturation voltage, collector-
emitter
Coupling capacitance
Collector-emitter leakage
current
Test condition
I_F = 10 mA, I_C = 2.5 mA
V_CE = 10 V
Part
Symbol Min
V_CEsat
CNY17F-1
C_C
I_CEO
CNY17F-2
CNY17F-3
CNY17F-4
I_CEO
I_CEO
I_CEO
Typ.
0.25
0.6
2.0
2.0
5.0
5.0
Max Unit
0.4
V
pF
50
nA
50
nA
100
nA
100
nA
Current Transfer Ratio
Current Transfer Ratio I_C/I_F at V_CE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Test condition
Part
Symbol Min
Typ.
Current Transfer Ratio
I_F = 10 mA
CNY17F-1 CTR
40
CNY17F-2 CTR
63
CNY17F-3 CTR 100
CNY17F-4 CTR 160
I_F = 1.0 mA
CNY17F-1 CTR
13
30
CNY17F-2 CTR
22
45
CNY17F-3 CTR
34
70
CNY17F-4 CTR
56
90
Max Unit
80
%
125
%
200
%
320
%
%
%
%
%
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
3