CNY17F-3X007 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, No Base Connection

CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
6.0
V
DC forward current
I_F
60
mA
Surge forward current
t ≤ 10 µs
I_FSM
2.5
A
Power dissipation
P_diss
100
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BV_CEO
70
V
Collector current
I_C
50
mA
t ≤ 1.0 ms
I_C
100
mA
Total power dissipation
P_diss
150
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Test condition
V_IO = 500 V
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Symbol
V_ISO
R_IO
T_stg
T_amb
T_j
T_sld
Value
5300
≥ 7.0
≥ 7.0
≥ 0.4
175
≥ 10¹¹
- 55 to + 150
- 55 to + 100
100
260
Unit
V_RMS
mm
mm
mm
Ω
°C
°C
°C
°C
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2
Document Number 83607
Rev. 1.5, 26-Oct-04