BYG10D Datasheet, PDF (3/5 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier

BYG10D thru BYG10Y
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
400
350
V_R = V_RRM
300
P_R - Limit at 100 % V_R
250
200
150
100
P_R - Limit at 80 % V_R
50
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
1.6
1.4
V_R = V_RRM
Half Sine-Wave
1.2
R_θJA ≤ 25 K/W
1.0
0.8
0.6
0.4
0.2
0
0
R_θJA ≤ 125 K/W
R_θJA ≤ 150 K/W
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 2. Max. Average Forward Current vs. Ambient Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
1000
V_R = V_RRM
100
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
5000
4000
T_A = 100 °C
T_A = 125 °C
3000
2000
T_A = 75 °C
T_A = 50 °C
T_A = 25 °C
1000
0
0
I_R = 0.5 A, i_R = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Figure 6. Reverse Recovery Time vs. Forward Current
Document Number: 88957
Revision: 03-Jun-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
3