BYG10D Datasheet, PDF (1/5 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier

BYG10D thru BYG10Y
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
I_R
V_F
E_R
T_J max.
1.5 A
200 V to 1600 V
30 A
1.0 µA
1.15 V
20 mJ
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in generell purpose rectification of power
supplies, inverters, converters and freewheeling diodes
for consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Note:
• BYG10Y for commercial grade only
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG10D BYG10G
Device marking code
BYG10D BYG10G
BYG10J
BYG10J
BYG10K
BYG10K
BYG10M
BYG10M
BYG10Y
BYG10Y
UNIT
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
V_RRM
200
400
600
800
1000
1600
V
I_F(AV)
1.5
A
I_FSM
30
A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
E_R
I_(BR)R = 1 A, T_J = 25 °C (for BYG10D-BYG10M)
20
mJ
Operating junction and storage temperature range T_J, T_STG
- 55 to + 150
°C
Document Number: 88957
Revision: 03-Jun-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
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