BUF7216 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Fall time
Turn on time
Storage time
I_C = 0.4 A; I_B1 = 50 mA;
–I_B2 = 0.4 mA; V_S = 250 V
I_C = 0.35 A; I_B1 = 85 mA;
–I_B2 = 175 mA; V_S = 250 V
Fall time
Turn on time
Storage time
I_C = 1 A; I_B1 = 0.2 A;
–I_B2 = 0.5 A; V_S = 250 V
Fall time
Inductive load (figure 3)
Storage time
Fall time
Storage time
Fall time
I_C = 0.35 A; I_B1 = 85 mA;
–I_B2 = 175 mA; V_clamp = 300 V;
L = 200 mH; –V_BE = 5 V
I_C = 1 A; I_B1 = 0.2 A;
–I_B2 = 0.5 A; V_clamp = 300 V;
L = 200 mH; –V_BE = 5 V
BUF7216
Vishay Telefunken
Symbol Min
t_f
t_on
t_s
t_f
t_on
t_s
t_f
t_s
t_f
t_s
t_f
Typ
0.65
0.25
3.5
0.25
0.4
3
0.2
3.2
0.2
3
0.1
Max Unit
0.95 ms
0.5
ms
4.5
ms
0.35 ms
0.7
ms
4
ms
0.3
ms
4.5
ms
0.25 ms
3.5
ms
0.15 ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
Document Number 86520
Rev. 1, 20–Jan–99
www.vishay.de • FaxBack [phone]
3 (8)